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| Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features Fast response time High photo sensitivity Pb free Descriptions PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5 package. Due to is water clear epoxy the device is sensitive to visible and near infrared radiation. Applications Infrared applied system Floppy disk drive Optoelectronic switch Device Selection Guide LED Part No. PT Chip Material Silicon Lens Color Water Clear Everlight Electronics Co., Ltd. Device NoDPT-033-001 http:\\www.everlight.com Prepared date07-19-2004 Rev 1.3 Page: 1 of 7 Prepared byJaine Tsai PT331C Package Dimensions Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions 0.25mm Absolute Maximum Ratings (Ta=25) Parameter Collector-Emitter Voltage Emitter-Collector-Voltage Collector Current Operating Temperature Storage Temperature Lead Soldering Temperature Power Dissipation at (or below) 25 Free Air Temperature Symbol VCEO VECO IC Topr Tstg Tsol Pc Rating 30 5 20 -25 ~ +85 -40 ~ +85 260 75 Units V V mA mW Notes: *1:Soldering time5 seconds. Everlight Electronics Co., Ltd. Device NoDPT-033-001 http:\\www.everlight.com Prepared date07-19-2004 Rev 1.3 Page: 2 of 7 Prepared byJaine Tsai PT331C Electro-Optical Characteristics (Ta=25) Parameter Collector - Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Wavelength of Peak Sensitivity Rang of Spectral Bandwidth Symbol BVCEO Condition IC=100A Ee=0mW/cm2 Min. 30 5 --------0.7 ----Typ. ------15 15 --2.5 940 400-1100 Max. ----0.4 ----100 ------nA mA nm nm Units V V V S IE=100A BVECO Ee=0mW/cm2 IC=2mA VCE)(sat) Ee=1mW/cm2 tr tf ICEO IC(on) p 0.5 VCE=5V IC=mA RL=1000 Ee=0mW/cm2 VCE=20V Ee=1mW/cm2 VCE=5V ----- Rankings Parameter G H J K L IC(ON) Symbol Min 0.70 1.14 1.77 2.67 4.18 Max 1.90 2.60 3.61 5.07 7.07 mA VCE=5V Ee=1mW/c Unit Test Condition Everlight Electronics Co., Ltd. Device NoDPT-033-001 http:\\www.everlight.com Prepared date07-19-2004 Rev 1.3 Page: 3 of 7 Prepared byJaine Tsai PT331C Typical Electro-Optical Characteristics Curves Fig.1Collector Power Dissipation vs. Ambient Temperature Fig.2 Spectral Sensitivity 100 80 60 40 20 0 -25 0 25 50 75 85 100 1.0 Ta=25 C 0.8 0.6 0.4 0.2 0 100 300 500 700 900 1100 1300 Fig.3 Relative Collector Current vs. Ambient Temperature Fig.4 Collector Current vs. Irradiance 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 2 100 C 10 1 0.1 0.01 0.5 1 1.5 2 3 Everlight Electronics Co., Ltd. Device NoDPT-033-001 http:\\www.everlight.com Prepared date07-19-2004 Rev 1.3 Page: 4 of 7 Prepared byJaine Tsai PT331C Typical Electro-Optical Characteristics Curves Fig.5 Collector Dark Current vs. Ambient Temperature Fig.6 Collector Current vs. Collector-Emitter Voltage 10 14 12 10 10 10 8 6 10 4 2 10 0 25 50 75 100 0 0 1 2 3 4 Everlight Electronics Co., Ltd. Device NoDPT-033-001 http:\\www.everlight.com Prepared date07-19-2004 Rev 1.3 Page: 5 of 7 Prepared byJaine Tsai PT331C Reliability Test Item And Condition The reliability of products shall be satisfied with items listed below. Confidence level90% LTPD10% NO. Item Test Conditions Test Hours/ Sample Cycles Sizes 10secs 22pcs 22pcs IC(ON)Lx0.8 22pcs LLower Specification Limit 22pcs 22pcs 22pcs 22pcs 0/1 0/1 0/1 0/1 0/1 Failure Judgement Criteria Ac/Re 1 Solder Heat TEMP.2605 0/1 0/1 2 Temperature Cycle H : +100 L : -40 3 Thermal Shock H :+100 L :-10 4 High Temperature Storage 5 Low Temperature Storage 15mins 50Cycles 5mins 15mins 5mins 50Cycles 10secs 5mins 1000hrs 1000hrs 1000hrs 1000hrs TEMP.+100 TEMP.-40 6 DC Operating Life VCE=5V 7 High Temperature/ 85 / 85% R.H High Humidity Everlight Electronics Co., Ltd. Device NoDPT-033-001 http:\\www.everlight.com Prepared date07-19-2004 Rev 1.3 Page: 6 of 7 Prepared byJaine Tsai PT331C Packing Quantity Specification 1.500PCS/1Bag5Bags/1Box 2.10Boxes/1Carton Label Form Specification CPN: Customer's Production Number P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production Place PT331C Notes 1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don't reproduce or cause anyone to reproduce them without EVERLIGHT's consent. EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.C Tel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\www.everlight.com Everlight Electronics Co., Ltd. Device NoDPT-033-001 http:\\www.everlight.com Prepared date07-19-2004 Rev 1.3 Page: 7 of 7 Prepared byJaine Tsai |
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